文摘
High-performance solar-blind (200鈥?80 nm) avalanche photodetectors (APDs) were fabricated based on highly crystallized ZnO鈥揋a2O3 core鈥搒hell microwires. The responsivity can reach up to 1.3 脳 103 A/W under 鈭? V bias. Moreover, the corresponding detectivity was as high as 9.91 脳 1014 cm路Hz1/2/W. The device also showed a fast response, with a rise time shorter than 20 渭s and a decay time of 42 渭s. The quality of the detectors in solar-blind waveband is comparable to or even higher than that of commercial Si APD (APD120A2 from Thorlabs Inc.), with a responsivity 鈭? A/W, detectivity 鈭?012 cm路Hz1/2/W, and response time 鈭?0 ns. The high performance of this APD make it highly suitable for practical applications as solar-blind photodetectors, and this core鈥搒hell microstructure heterojunction design method would provide a new approach for realizing an APD device.