High-Energy-Density Sol鈥揋el Thin Film Based on Neat 2-Cyanoethyltrimethoxysilane
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- 作者：Yunsang Kim ; Mohanalingam Kathaperumal ; O鈥橬eil L. Smith ; Ming-Jen Pan ; Ye Cai ; Kenneth H. Sandhage ; Joseph W. Perry
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2013
- 出版时间：March 13, 2013
- 年：2013
- 卷：5
- 期：5
- 页码：1544-1547
- 全文大小：249K
- 年卷期：v.5,no.5(March 13, 2013)
- ISSN：1944-8252
文摘
Hybrid organic鈥搃norganic sol鈥揼el dielectric thin films from a neat 2-cyanoethyltrimethoxysilane (CNETMS) precursor have been fabricated and their permittivity, dielectric strength, and energy density characterized. CNETMS sol鈥揼el films possess compact, polar cyanoethyl groups and exhibit a relative permittivity of 20 at 1 kHz and breakdown strengths ranging from 650 V/渭m to 250 V/渭m for film thicknesses of 1.3 to 3.5 渭m. Capacitors based on CNETMS films exhibit extractable energy densities of 7 J/cm3 at 300 V/渭m, as determined by charge鈥揹ischarge and polarization-electric field measurements, as well as an energy extraction efficiency of 91%. The large extractable energy resulting from the linear dielectric polarization behavior suggests that CNETMS films are promising sol鈥揼el materials for pulsed power applications.