The electrical properties of self-assembled monolayers (SAMs) on a gold surface have beenexplored to address the relation between the conductance of a molecule and its electronic structure. Weprobe interfacial electron transfer processes, particularly those involving electroactive groups, of SAMs ofthiolates on Au by using shear force-based scanning probe microscopy (SPM) combined with current-voltage (
i-
V) and current-distance (
i-
d) measurements. Peak-shaped
i-
V curves were obtained for thenitro- and amino-based SAMs studied here. Peak-shaped cathodic
i-
V curves for nitro-based SAMs wereobserved at negative potentials in both forward and reverse scans and were used to define the thresholdtip bias,
VTH, for electric conduction. For a SAM of 2',5'-dinitro-4,4'-bis(phenylethynyl)-1-benzenethiolate,
VII,
VTH was nearly independent of the tip material [Ir, Pt, Ir-Pt (20-80%), Pd, Ni, Au, Ag, In]. For all of theSAMs studied, the current decreased exponentially with increasing distance,
d, between tip and substrate.The exponential attenuation factors (
![](/images/gifchars/beta2.gif)
values) were lower for the nitro-based SAMs studied here, ascompared with alkylthiol-based SAMs. Both
VTH and
![](/images/gifchars/beta2.gif)
of the nitro-based SAMs also depended strongly onthe molecular headgroup on the end benzene ring addressed by the tip. Finally, we confirmed the "memory"effect observed for nitro-based SAMs. For mixed SAMs of
VII and hexadecanethiol,
I, the fraction of thecharge collected in the negative tip bias region that can be read out at a positive tip bias on reverse scan(up to 38%) depended on the film composition and decreased with an increasing fraction of
I, suggestingthat lateral electron hopping among molecules of
VII occurs in the vicinity of the tip.