Scanning Tunneling Microscope and Photoemission Spectroscopy Investigations of Bismuth on Epitaxial Graphene on SiC(0001)

详细信息    查看全文

• 作者：Han Huang ; Swee Liang Wong ; Yuzhan Wang ; Jia-Tao Sun ; Xingyu Gao ; Andrew Thye Shen Wee
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：October 30, 2014
• 年：2014
• 卷：118
• 期：43
• 页码：24995-24999
• 全文大小：371K
• ISSN：1932-7455

文摘

The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011虆2) 鈭?EG(0001) and Bi鉄?12虆0鉄?aligned well with EG鉄?12虆0鉄? Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.