Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

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• 作者：Zhaogang Nie ; Run Long ; Jefri S. Teguh ; Chung-Che Huang ; Daniel W. Hewak ; Edwin K. L. Yeow ; Zexiang Shen ; Oleg V. Prezhdo ; Zhi-Heng Loh
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：September 3, 2015
• 年：2015
• 卷：119
• 期：35
• 页码：20698-20708
• 全文大小：663K
• ISSN：1932-7455

文摘

Femtosecond optical pump鈥損robe spectroscopy is employed to elucidate the band-selective ultrafast carrier dynamics of few-layer MoS₂. Following narrowband resonant photoexcitation of the exciton A transition, the subpicosecond to picosecond relaxation dynamics of the electron and the hole at the K valley are separately interrogated by a broadband probe pulse. The temporal evolution of the spectral first moment reveals nonexponential intravalley relaxation dynamics in the conduction band. Fluence dependence measurements suggest that this relaxation process is predominantly mediated by acoustic phonon emission. Intervalley scattering of carriers from the K valley to the extrema of the conduction and valence bands is also observed via the decay of the spectral zeroth moment. In addition, second-order Raman scattering leads to the emergence of sidebands in the normalized differential transmission spectra. The observed two-phonon energies and the fluence-dependent time constants suggest that the E_1g longitudinal optical (LO) phonon and the LA phonon participate in intervalley scattering in the conduction and valence bands, respectively. Ab initio nonadiabatic molecular dynamics simulations yield time constants of 0.80 and 0.72 ps for intra- and intervalley electronic relaxation, respectively; the latter agrees well with experiment. Finally, the normalized differential transmission spectra reveal a two-electron shake-up satellite that originates from band-edge radiative recombination and the simultaneous excitation of a hole from K_v1 to K_v2. From its spectral position, a K_v1鈥揔_v2 spin鈥搊rbit splitting of 1166 卤 1 cm^鈥? is deduced. The observation of the two-electron transition points to the existence of strong electron correlation in photoexcited few-layer MoS₂.