Large Energy Pulse Generation Modulated by Graphene Epitaxially Grown on Silicon Carbide

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• 作者：Haohai Yu ; Xiufang Chen ; Huaijin Zhang ; Xiangang Xu ; Xiaobo Hu ; Zhengping Wang ; Jiyang Wang ; Shidong Zhuang ; Minhua Jiang
• 刊名：ACS Nano
• 出版年：2010
• 出版时间：December 28, 2010
• 年：2010
• 卷：4
• 期：12
• 页码：7582-7586
• 全文大小：334K
• 年卷期：0
• ISSN：1936-086X

文摘

Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.