Vapor-Phase Synthesis of Gallium Phosphide Nanowires

详细信息    查看全文

• 作者：Zhanjun Gu ; M. Parans Paranthaman ; Zhengwei Pan
• 刊名：Crystal Growth & Design
• 出版年：2009
• 出版时间：January 7, 2009
• 年：2009
• 卷：9
• 期：1
• 页码：525-527
• 全文大小：213K
• 年卷期：v.9,no.1(January 7, 2009)
• ISSN：1528-7505

文摘

Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 °C in a tube furnace system. The nanowires have diameters in the range of 25−100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga−P−O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III−V compound nanowires.