Magnetoelectric Assisted 180掳 Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

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• 作者：Zhiguang Wang ; Yue Zhang ; Yaojin Wang ; Yanxi Li ; Haosu Luo ; Jiefang Li ; Dwight Viehland
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：August 26, 2014
• 年：2014
• 卷：8
• 期：8
• 页码：7793-7800
• 全文大小：420K
• ISSN：1936-086X

文摘

Magnetization-based memories, e.g., hard drive and magnetoresistive random-access memory (MRAM), use bistable magnetic domains in patterned nanomagnets for information recording. Electric field (E) tunable magnetic anisotropy can lower the energy barrier between two distinct magnetic states, promising reduced power consumption and increased recording density. However, integration of magnetoelectric heterostructure into MRAM is a highly challenging task owing to the particular architecture requirements of each component. Here, we show an epitaxial growth of self-assembled CoFe₂O₄ nanostripes with bistable in-plane magnetizations on Pb(Mg,Nb)O₃鈥揚bTiO₃ (PMN鈥揚T) substrates, where the magnetic switching can be triggered by E-induced elastic strain effect. An unprecedented magnetic coercive field change of up to 600 Oe was observed with increasing E. A near 180掳 magnetization rotation can be activated by E in the vicinity of the magnetic coercive field. These findings might help to solve the 1/2-selection problem in traditional MRAM by providing reduced magnetic coercive field in E field selected memory cells.

Keywords:

magnetoelectric; magnetic anisotropy; magnetoresistance; self-assembled film