文摘
We have investigated the seedless electroless deposition (ELD) of Ni on functionalized self-assembled monolayers (SAMs) using scanning electron and optical microscopies, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. For all SAMs studied, the Ni deposition rate is dependent on the bath pH, deposition temperature, and complexing agent. In contrast to the physical vapor deposition of Ni on SAMs, electrolessly deposited Ni does not penetrate through the SAM. This behavior indicates that ELD is a suitable technique for the deposition of low-to-moderate reactivity on organic thin films. We demonstrate that Ni can be selectively deposited on SAMs using two different methods. First, selectivity can be imparted by the formation of Ni(II)鈥搒urface complexes. As a demonstration, we selectively deposited Ni on the 鈭扖OOH terminated SAM areas of patterned 鈭扖OOH/鈥揅H3 or 鈭扖OOH/鈥揙H terminated SAMs. Here, Ni2+ ions form Ni2+鈥揷arboxylate complexes with the 鈭扖OOH terminal group, which comprise the nucleation sites for subsequent metal deposition. Second, we demonstrate that nickel is selectively deposited on the 鈭扖H3 terminated SAM areas of a patterned 鈭扥H/鈥揅H3 terminated SAM. In this case, the Ni2+ ion does not specifically interact with the 鈭扖H3 terminal group. Rather, selectivity is imparted by the interaction of the reductant, dimethylamine borane (DMAB), with the 鈭扥H and 鈭扖H3 terminal groups.