Electronic Junction Control in a Nanotube-Semiconductor Schottky Junction Solar Cell
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- 作者：Pooja Wadhwa ; Bo Liu ; Mitchell A. McCarthy ; Zhuangchun Wu ; Andrew G. Rinzler
- 刊名：Nano Letters
- 出版年：2010
- 出版时间：December 8, 2010
- 年：2010
- 卷：10
- 期：12
- 页码：5001-5005
- 全文大小：286K
- 年卷期：v.10,no.12(December 8, 2010)
- ISSN：1530-6992
文摘
We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation) devices exhibit 8.5% power conversion efficiency (PCE). With active modulation the PCE is continuously and reversibly changed from 4 to 11%.