Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC → SH Transformation of Silicon
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- 作者：John S. Tse ; Michael Hanfland ; Roxana Flacau ; Serge Desgreniers ; Zucheng Li ; Kolja Mende ; Keith Gilmore ; Alexander Nyrow ; Marco Moretti Sala ; Christian Sternemann
- 刊名：Journal of Physical Chemistry C
- 出版年：2014
- 出版时间：January 16, 2014
- 年：2014
- 卷：118
- 期：2
- 页码：1161-1166
- 全文大小：321K
- ISSN：1932-7455
文摘
X-ray diffraction experiments at 80 K show that when silicon is compressed under hydrostatic conditions the intermediate high-pressure phases are bypassed leading to a direct transformation to the simple hexagonal structure at 17 GPa. A maximum entropy analysis of the diffraction patterns reveals dramatic alterations in the valence electron distribution from tetrahedral covalent bonding to localization in the interstitial sites and along the one-dimensional silicon atom chain running along adjacent hexagonal layers. Changes in the orbital character of the unoccupied states are confirmed using X-ray Raman scattering spectroscopy and theoretical Bethe-Salpeter equation calculations. This is the first direct observation indicating that the silicon valence electrons in 3s and 3p orbitals are transferred to the 3d orbitals at high density which proves that electrons of compressed elemental solids migrate from their native bonding configuration to interstitial regions.