Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

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• 作者：Jie Yu ; Guanxiong Liu ; Anirudha V. Sumant ; Vivek Goyal ; Alexander A. Balandin
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：March 14, 2012
• 年：2012
• 卷：12
• 期：3
• 页码：1603-1608
• 全文大小：378K
• 年卷期：v.12,no.3(March 14, 2012)
• ISSN：1530-6992

文摘

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO₂/Si substrates reveal the breakdown current density on the order of 1 渭A/nm² (i.e., 10⁸ A/cm²), which is 100脳 larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO₂ with synthetic diamond, one can substantially increase the current-carrying capacity of graphene to as high as 18 渭A/nm² even at ambient conditions. Our results indicate that graphene鈥檚 current-induced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphene鈥檚 applications in high-frequency transistors, interconnects, and transparent electrodes and can lead to the new planar sp²-on-sp³ carbon-on-carbon technology.

Keywords:

Graphene; graphene-on-diamond; breakdown current; UNCD; graphene transistors