Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
详细信息 查看全文
- 作者：Dustin Z. AustinMelanie A. Jenkins ; Derryl Allman ; Sallie Hose ; David Price ; Charles L. Dezelah ; John F. Conley Jr.
- 刊名：Chemistry of Materials
- 出版年：2017
- 出版时间：February 14, 2017
- 年：2017
- 卷：29
- 期：3
- 页码：1107-1115
- 全文大小：652K
- ISSN：1520-5002
文摘
Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2,3-dimethylbutadiene ruthenium tricarbonyl [Ru(DMBD)(CO)3]. Both ALD Ru and RuO2 films were deposited using alternating N2 -purge-separated pulses of Ru(DMBD)(CO)3 and O2. ALD Ru metal films were deposited via short (2 s) pulses of O2. Ru films have an ALD temperature window from 290 to 320 °C with a GPC of 0.067 nm/cycle and a negligible nucleation delay on SiO2. Ru films show a strong hexagonal crystal structure with low resistivity of approximately 14 μΩ cm at 320 °C. RuO2 films were deposited using longer (20 s) pulses of either molecular O2 or O2 plasma. RuO2 films deposited via thermal ALD using molecular O2 have a temperature window from 220 to 240 °C with a GPC and nucleation delay on SiO2 of 0.065 nm/cycle and 35 cycles, respectively. Thermal ALD RuO2 films show a distinct rutile phase microstructure with a resistivity of approximately 62 μΩ cm. In comparison to thermal ALD, the PEALD RuOx films show a lower growth rate and higher nucleation delay of 0.029 nm/cycle and 76 cycles, respectively. PEALD RuOx films also exhibit less distinct crystallinity and a higher resistivity of 377 μΩ cm.