Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

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• 作者：Nicholas P. Calta ; Jino Im ; Lei Fang ; Thomas C. Chasapis ; Daniel E. Bugaris ; Duck Young Chung ; Wai-Kwong Kwok ; Mercouri G. Kanatzidis
• 刊名：Inorganic Chemistry
• 出版年：2016
• 出版时间：December 5, 2016
• 年：2016
• 卷：55
• 期：23
• 页码：12477-12481
• 全文大小：295K
• ISSN：1520-510X

文摘

Large single crystals of SrIr₄In₂Ge₄ were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E_g = 0.25(3) eV. It crystallizes in the tetragonal EuIr₄In₂Ge₄ structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr₄In₂Ge₄ and the parent structure Ca₃Ir₄Ge₄, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.