文摘
Octahedral-shaped, spindle-shaped, and wire-shaped Cu3Si nanostructures were synthesized through a silicon void-filling process. Faceted silicon voids were observed to spontaneously grow at the SiO2/Si interface through the catalytic effect of Cu3Si, and their shapes were modified by the stresses at the Si/Cu3Si interfaces. By controlling the relative amount of stress relief, it is possible to form differently shaped silicon voids. This work shows that different patterned nanostuctures of other materials may also be created through this growth mechanism.