Quasi-aligned β-Ga2O3 nanowires were fabricated using the brass wire meshes as the substrates. The nanowire roots were tightly connected to the brass wire surfaces that resulted in a very good physical and electrical contact. Electrical measurements showed that the ohmic contacts were achieved and the resistivities of the nanowires were 300−500 Ω·cm. The Ga2O3 nanowire/brass wire hybrid structures exhibited an enhanced field-emission performance. A turn-on field of ∼6.2 V·μm−1 at an emission current density of 10 μA·cm−2 and an emission current fluctuation within ±13% at a mean field-emission current density of ∼0.56 μA·cm−2 were measured.