Synthesis of In2O3 Nanowire-Decorated Ga2O3 Nanobelt Heterostructures and Their Electrical and Field-Emission Properties

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• 作者：Jing Lin ; Yang Huang ; Yoshio Bando ; Chengchun Tang ; Chun Li ; Dmitri Golberg
• 刊名：ACS Nano
• 出版年：2010
• 出版时间：April 27, 2010
• 年：2010
• 卷：4
• 期：4
• 页码：2452-2458
• 全文大小：425K
• 年卷期：0
• ISSN：1936-086X

文摘

We report on the synthesis of In₂O₃ nanowire-decorated Ga₂O₃ nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In₂O₃ nanowire forms a sort of a “dorsal fin” on the Ga₂O₃ nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (∼1.31 V/μm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In₂O₃-decorated Ga₂O₃ heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.