Synthesis and Characterization of Neutral cis-Hexacoordinate Bis(-diketonate) Silicon(IV) Complexes
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- 作者：Chongying Xu ; Thomas H. Baum ; and Arnold L. Rheingold
- 刊名：Inorganic Chemistry
- 出版年：2004
- 出版时间：February 23, 2004
- 年：2004
- 卷：43
- 期：4
- 页码：1568 - 1573
- 全文大小：105K
- 年卷期：v.43,no.4(February 23, 2004)
- ISSN：1520-510X
文摘
Three new neutral cis-hexacoordinate bis(
-diketonato) silicon(IV) complexes, (thd)2SiX2, where X = Me (1), tBuO(2), and tAmO (3), and thd = 2,2,6,6-tetramethyl-3,5-heptanedionato, were synthesized in high yield. Single crystalX-ray crystallographic analysis revealed that 1 was monomeric with cis-hexacoordinate octahedral geometry on thesilicon and oxygen atoms. Crystal data: empirical formula C24H46O4Si, crystal system monoclinic; space groupP21/n; unit cell dimensions a = 10.4195(5) Å, b = 19.7297(10) Å, c = 13.6496(7) Å; = 102.6590(10)
; Z =4. Variable temperature NMR confirmed (thd)2SiX2 maintained cis-geometry in solution by observing two distinctmethyl proton resonances (of thd) at room temperature or low temperatures. These compounds show potential foruse as low temperature silicon oxide CVD precursors for transition metal silicate high 
gate dielectrics.
-diketonato) silicon(IV) complexes, (thd)2SiX2, where X = Me (1), tBuO(2), and tAmO (3), and thd = 2,2,6,6-tetramethyl-3,5-heptanedionato, were synthesized in high yield. Single crystalX-ray crystallographic analysis revealed that 1 was monomeric with cis-hexacoordinate octahedral geometry on thesilicon and oxygen atoms. Crystal data: empirical formula C24H46O4Si, crystal system monoclinic; space groupP21/n; unit cell dimensions a = 10.4195(5) Å, b = 19.7297(10) Å, c = 13.6496(7) Å; = 102.6590(10); Z =4. Variable temperature NMR confirmed (thd)2SiX2 maintained cis-geometry in solution by observing two distinctmethyl proton resonances (of thd) at room temperature or low temperatures. These compounds show potential foruse as low temperature silicon oxide CVD precursors for transition metal silicate high gate dielectrics.