鈥淒ouble Exposure Method鈥? a Novel Photolithographic Process to Fabricate Flexible Organic Field-Effect Transistors and Circuits

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• 作者：Deyang Ji ; Lang Jiang ; Huanli Dong ; Qing Meng ; Zongrui Wang ; Hantang Zhang ; Wenping Hu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2013
• 出版时间：April 10, 2013
• 年：2013
• 卷：5
• 期：7
• 页码：2316-2319
• 全文大小：310K
• 年卷期：v.5,no.7(April 10, 2013)
• ISSN：1944-8252

文摘

A novel process called 鈥渄ouble exposure method鈥?has for the first time been developed to utilize common organic materials as insulating layers at low annealing temperature in the process of photolithography. In this method, organic dielectric layer will not dissolve in the final lift-off step by using developer to replace traditional acetone. Bottom-gate bottom-contact (BGBC) OFETs are fabricated on the flexible PET substrates with polystyrene (PS) and pentacene as dielectric layer and semiconductor layer, respectively. Transistors with mobility of 0.36 cm² V^鈥? s^鈥? and logic inverter with gain of 9 on the plastic substrates have been fabricated, demonstrating the potential appliction of 鈥渄ouble exposure method鈥?in flexible organic electronics.

Keywords:

double exposure; polystyrene; flexible; OFETs; organic circuits