Ferromagnetic and Electrical Characteristics of in Situ Manganese-Doped GaN Nanowires

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• 作者：Congkang Xu ; Junghwan Chun ; Hyo Jin Lee ; Yoon Hee Jeong ; Seong-Eok Han ; Ju-Jin Kim ; Dong Eon Kim
• 刊名：Journal of Physical Chemistry C
• 出版年：2007
• 出版时间：January 25, 2007
• 年：2007
• 卷：111
• 期：3
• 页码：1180 - 1185
• 全文大小：571K
• 年卷期：v.111,no.3(January 25, 2007)
• ISSN：1932-7455

文摘

The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the absenceof any catalyst are reported. The nanowires are of single-crystal hexagonal structure, containing Mn up to 2.5atom %. Magnetism measurements indicate that the nanowires have room temperature ferromagnetism withCurie temperature above 350 K. Magnetic force microscopy verifies that the ferromagnetism of the individualnanowire is uniform along the nanowire. An electrical transport measurement reveals that the nanowire hasa weak gating effect and is of the n-type.