文摘
Compound nanowires (NWs) of Si-related materials, such as SiC, Si3N4, and Zn2SiO4 have been synthesized in high yield via a simple thermal evaporation, chemical reaction, and deposition process using porous silicon as the Si element source. The vapor-solid growth mechanism of NWs plays a main role in the formation of the as-prepared Si-related NWs. Photoluminescence (PL) measurements reveal that SiC NWs emit an ultraviolet light at 364 nm, Si3N4 NWs shows a broad PL spectrum with a maximum at 495 nm, and Zn2SiO4 NWs reveals a green emission at about 510 nm. These Si-related NWs have potential in both composites and optoelectronic nanodevices.