Surface and Internal Reactions of ZnO Nanowires: Etching and Bulk Defect Passivation by H Atoms

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• 作者：Wooseok Kim ; Geunjae Kwak ; Minbok Jung ; Sam K. Jo ; James B. Miller ; Andrew J. Gellman ; Kijung Yong
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：August 2, 2012
• 年：2012
• 卷：116
• 期：30
• 页码：16093-16097
• 全文大小：412K
• 年卷期：v.116,no.30(August 2, 2012)
• ISSN：1932-7455

文摘

Reactions of ZnO nanowires (NWs) with atomic hydrogen were investigated with temperature-programmed desorption (TPD) mass spectrometry, scanning electron microscopy, and photoluminescence (PL) spectroscopy. During TPD, molecular H₂, H₂O, and atomic Zn desorbed from ZnO NWs pretreated with atomic H at 220 K. Three distinct H₂ TPD peaks, two from surface H states and one from a bulk H state, were identified. The TPD assignment of the bulk H state was corroborated by significantly suppressed emission at 564 nm and enhanced emission at 375 nm in PL experiments. Etching of ZnO NWs by atomic H was confirmed by desorption of molecular H₂O and atomic Zn in TPD and by electron microscopic images of H-treated ZnO NWs. A mechanistic model for underlying H/ZnO NW reactions is proposed and discussed.