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Design and Synthesis of a New Layered Thermoelectric Material LaPbBiS3O
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文摘
A new quinary oxysulfide LaPbBiS3O was designed and successfully synthesized via a solid-state reaction in a sealed evacuated quartz tube. This material, composed of stacked NaCl-like [M4S6] (where M = Pb, Bi) layers and fluorite-type [La2O2] layers, crystallizes in the tetragonal space group P4/nmm with a = 4.0982(1) 脜, c = 19.7754(6) 脜, and Z = 2. Electrical resistivity and Hall effect measurements demonstrate that it is a narrow gap semiconductor with an activation energy of 鈭?7 meV. The thermopower and the figure of merit at room temperature were measured to be 鈭?2 渭V/K and 0.23, respectively, which makes LaPbBiS3O and its derivatives be promising for thermoelectric applications.

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