Transfer-Printing of Tunable Porous Silicon Microcavities with Embedded Emitters
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- 作者：Hailong Ning ; Neil A. Krueger ; Xing Sheng ; Hohyun Keum ; Chen Zhang ; Kent D. Choquette ; Xiuling Li ; Seok Kim ; John A. Rogers ; Paul V. Braun
- 刊名：ACS Photonics
- 出版年：2014
- 出版时间：November 19, 2014
- 年：2014
- 卷：1
- 期：11
- 页码：1144-1150
- 全文大小：534K
- ISSN：2330-4022
文摘
Here we demonstrate, via a modified transfer-printing technique, that electrochemically fabricated porous silicon (PSi) distributed Bragg reflectors (DBRs) can serve as the basis of high-quality hybrid microcavities compatible with most forms of photoemitters. Vertical microcavities consisting of an emitter layer sandwiched between 11- and 15-period PSi DBRs were constructed. The emitter layer included a polymer doped with PbS quantum dots, as well as a heterogeneous GaAs thin film. In this structure, the PbS emission was significantly redistributed to a 2.1 nm full-width at half-maximum around 1198 nm, while the PSi/GaAs hybrid microcavity emitted at 902 nm with a sub-nanometer full-width at half-maximum and quality-factor of 1058. Modification of PSi DBRs to include a PSi cavity coupling layer enabled tuning of the total cavity optical thickness. Infiltration of the PSi with Al2O3 by atomic layer deposition globally red-shifted the emission peak of PbS quantum dots up to 鈭?8 nm (鈭?.9 nm per cycle), while introducing a cavity coupling layer with a gradient optical thickness spatially modulated the cavity resonance of the PSi/GaAs hybrid such that there was an 鈭?0 nm spectral variation in the emission of separate GaAs modules printed 鈭? mm apart.