Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts
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- 作者：Dasa L. Dheeraj ; Gilles Patriarche ; Hailong Zhou ; Thang B. Hoang ; Anthonysamy F. Moses ; Sondre Grø ; nsberg ; Antonius T. J. van Helvoort ; Bjø ; rn-Ove Fimland ; Helge Weman
- 刊名：Nano Letters
- 出版年：2008
- 出版时间：December 10, 2008
- 年：2008
- 卷：8
- 期：12
- 页码：4459-4463
- 全文大小：311K
- 年卷期：v.8,no.12(December 10, 2008)
- ISSN：1530-6992
文摘
We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature microphotoluminescence (μ-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.