Observation of the Long Afterglow in AlN Helices

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• 作者：Lei Jin ; Huayu Zhang ; Ruiqun Pan ; Ping Xu ; Jiecai Han ; Xinghong Zhang ; Quan Yuan ; Zhihua Zhang ; Xianjie Wang ; Yi Wang ; Bo Song
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6575-6581
• 全文大小：469K
• ISSN：1530-6992

文摘

The coupling effect between nitrogen-vacancies (V_N) and aluminum-interstitial sites (Al_i) is investigated theoretically and experimentally in AlN helices. First-principles calculations predict a photoluminescence emission peak at approximately 600 nm in AlN doped with complex-defect (V_NAl_i). A typical long afterglow (persistent luminescence) was observed in unintentionally doped AlN helices by introducing the complex-defect of (V_NAl_i). An analysis of the luminescent characteristics indicated that the mechanism behind this afterglow is the complex-defect level and complex-defect density. These findings may further enrich the thoughts of defects in the wide band gap semiconductor of AlN.