We demonstrate a nanopi
llar (NP) device structure for imp
lementing p
lasmonica
lly enhanced ava
lanche photodetector arrays with thin ava
lanche vo
lumes ( 310 nm 脳 150 nm 脳 150 nm). A
loca
lized 3D e
lectric fie
ld due to a core鈥搒he
ll PN junction in a NP acts as a mu
ltip
lication region, whi
le efficient
light absorption takes p
lace via surface p
lasmon po
lariton B
loch wave (SPP-BW) modes due to a se
lf-a
ligned meta
l nanoho
le
lattice. Ava
lanche gains of 216 at 730 nm at 鈭?2 V are obtained. We show through capacitance鈥搗o
ltage characterization, temperature-dependent breakdown measurements, and detai
led device mode
ling that the ava
lanche region is on the order of the ionization path
length, such that dead-space effects become significant. This work presents a c
lear path toward engineering dead space effects in thin 3D-confined mu
ltip
lication regions for high performance ava
lanche detectors for app
lications in te
lecommunications, sensing and sing
le photon detection.
Keywords:
llar&qsSearchArea=searchText">Nanopillar; impact ionization; ll&qsSearchArea=searchText">core鈭抯hell; lanche+gain&qsSearchArea=searchText">avalanche gain; dead space; lasmons&qsSearchArea=searchText">surface plasmons