Axial Diffusion Barriers in Near-Infrared Nanopillar LEDs
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- 作者：Adam C. Scofield ; Andrew Lin ; Michael Haddad ; Diana L. Huffaker
- 刊名：Nano Letters
- 出版年：2014
- 出版时间：November 12, 2014
- 年：2014
- 卷：14
- 期：11
- 页码：6037-6041
- 全文大小：280K
- ISSN：1530-6992
文摘
The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.