Carbon Nanotube Memory by the Self-Assembly of Silicon Nanocrystals as Charge Storage Nodes

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• 作者：Mario Olmedo ; Chuan Wang ; Koungmin Ryu ; Huimei Zhou ; Jingjian Ren ; Ning Zhan ; Chongwu Zhou ; Jianlin Liu
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：October 25, 2011
• 年：2011
• 卷：5
• 期：10
• 页码：7972-7977
• 全文大小：830K
• 年卷期：0
• ISSN：1936-086X

文摘

A memory structure based on self-aligned silicon nanocrystals (Si NCs) grown over Al₂O₃-covered parallel-aligned carbon nanotubes (CNTs) by gas source molecular beam epitaxy is reported. Electrostatic force microscopy characterizations directly prove the charging and discharging of discrete NCs through the Al₂O₃ layer covering the CNTs. A CNT field effect transistor based on the NC/CNT structure is fabricated and characterized, demonstrating evident memory characteristics. Direct tunneling and Fowler–Nordheim tunneling phenomena are observed at different programming/erasing voltages. Retention is demonstrated to be on the order of 10⁴ s. Although there is still plenty of room to enhance the performance, the results suggest that CNT-based NC memory with diminutive CNTs and NCs could be an alternative structure to replace traditional floating gate memory.