Generation of Charged Nanoparticles and Their Deposition Behavior under Alternating Electric Bias during Chemical Vapor Deposition of Silicon

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• 作者：Woong-Kyu Youn ; Chan-Soo Kim ; Jae-Young Lee ; Sung-Soo Lee ; Nong-Moon Hwang
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：November 29, 2012
• 年：2012
• 卷：116
• 期：47
• 页码：25157-25163
• 全文大小：566K
• 年卷期：v.116,no.47(November 29, 2012)
• ISSN：1932-7455

文摘

The generation of charged nanoparticles was confirmed under typical conditions of the thin film deposition during the silicon chemical vapor deposition (CVD) process. To exert the electric force on these charged nanoparticles, the alternating current (ac) bias was applied to the stainless substrate holder during CVD. The bias frequency and voltage significantly affected the microstructure evolution and the growth rate. As the frequency at 卤100 V was increased from 0.2 to 0.5, 1, and 5 Hz, the mass of the film became respectively 1.1, 2.2, 3.0, and 3.5 times compared with that of the film deposited under the zero bias. As the bias voltage at 1 Hz was increased from 0 to 卤50, 卤100, 卤150, and 卤200 V, the mass was increased respectively by 1.8, 3, 4.5, and 8.5 times.