Nonclassical Crystallization in Low-Temperature Deposition of Crystalline Silicon by Hot-Wire Chemical Vapor Deposition

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• 作者：Seung-Wan Yoo ; Ju-Seop Hong ; Sung-Soo Lee ; Chan-Soo Kim ; Tae-Sung Kim ; Nong-Moon Hwang
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：December 3, 2014
• 年：2014
• 卷：14
• 期：12
• 页码：6239-6247
• 全文大小：638K
• ISSN：1528-7505

文摘

The effect of process pressure on the deposition behavior of crystalline Si films during hot-wire chemical vapor deposition was approached by nonclassical crystallization, wherein crystals grow not by individual atoms, but by nanoparticles. The size distribution of charged nanoparticles generated in the gas phase was measured using a particle beam mass spectrometer, and the nanoparticles were observed by transmission electron microscopy (TEM) after being captured from the gas phase on a TEM grid membrane. This found that, as the pressure is increased from 0.3 to 2 Torr, it is not only the size and the number of captured nanoparticles that are reduced but also the rate of deposition. An increase in the distance at which nanoparticles were captured from the hot wires under 1.5 Torr also reduced the size and number of particles; however, this tendency decreased markedly at 0.3 Torr. These results imply that the Si-H system should have a retrograde solubility, whose tendency increases with increasing pressure. The pressure dependence of the deposition behavior can be explained by nonclassical crystallization. On the basis of this understanding, the microcrystalline Si could be deposited on a glass substrate at 370 掳C with an amorphous incubation layer of 鈭?0 nm.