Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
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- 作者：Lorenzo Mancini ; Nooshin Amirifar ; Deodatta Shinde ; Ivan Blum ; Matthieu Gilbert ; Angela Vella ; Fran莽ois Vurpillot ; Williams Lefebvre ; Rodrigue Lard茅 ; Etienne Talbot ; Philippe Pareige ; Xavier Portier ; Ahmed Ziani ; Christian Davesnne ; Christophe Durand ; Jo毛l Eymery ; Rapha毛l Butt茅 ; Jean-Fran莽ois Carlin ; Nicolas Grandjean ; Lorenzo Rigutti
- 刊名：Journal of Physical Chemistry C
- 出版年：2014
- 出版时间：October 16, 2014
- 年：2014
- 卷：118
- 期：41
- 页码：24136-24151
- 全文大小：907K
- ISSN：1932-7455
文摘
Atom probe tomography allows for three-dimensional reconstruction of the elemental distribution in materials at the nanoscale. However, the measurement of the chemical composition of compound semiconductors may exhibit strong biases depending on the experimental parameters used. This article reports on a systematic analysis of the composition measurement of III鈥揘 binary (AlN, GaN) and ternary compounds (InGaN, InAlN), MgO, and ZnO by laser-assisted tomographic atom probe as a function of laser power and applied DC bias. We performed separate series of measurements at constant bias, constant laser pulse energy, and constant detection rate and a spatial analysis of the surface field through detector hitmap ratios of elemental charge states. As a result, (i) we can determine the separate roles of laser energy and surface field鈥攖he latter being the dominant factor under standard conditions of analysis; (ii) we compare the behavior of different samples and (iii) different materials; and (iv) we critically discuss the reliability of the measurement of InxGa1鈥?i>xN and InxAl1鈥?i>xN alloy fractions and of the Tb concentration in rare-earth-doped ZnO.