Geometry Effect on the Strain-Induced Self-Rolling of Semiconductor Membranes

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• 作者：Ik Su Chun ; Archana Challa ; Brad Derickson ; K. Jimmy Hsia ; Xiuling Li
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：October 13, 2010
• 年：2010
• 卷：10
• 期：10
• 页码：3927-3932
• 全文大小：429K
• 年卷期：v.10,no.10(October 13, 2010)
• ISSN：1530-6992

文摘

Semiconductor micro- and nanotubes can be formed by strain-induced self-rolling of membranes. The effect of geometrical dimensions on the self-rolling behavior of epitaxial mismatch-strained In_xGa_1−xAs−GaAs membranes are systematically studied both experimentally and theoretically using the finite element method. The final rolling direction depends on the length and width of the membrane as well as the diameter of the rolled-up tube. The energetics of the final states, the history of rolling process, and the kinetic control of the etching anisotropy ultimately determine the rolling behavior. Results reported here provide critical information for precise positioning and uniform large area assembly of semiconducting micro- and nanotubes for applications in photonics, microelectromechanical systems, etc.

Keywords:

Strain-induced self-rolling; semiconductor micro- and nanotubes; GaAs MOCVD; finite element method