We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO
x/TiO
2/TaO
x structure, high current density over 10
7 A cm
鈥? and excellent nonlinear characteristics up to 10
4 were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO
2 film, and consequently, the energy band of the TiO
2 film was symmetrically bent at the top and bottom TaO
x/TiO
2 interfaces and modified as a crested oxide barrier. Furthermore, the one selector鈥搊ne resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.
Keywords:
resistance random access memory; selection device; nonlinearity; crested oxide barrier; one selector鈭抩ne resistor