Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

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• 作者：Hao Zhu ; Sujitra J. Pookpanratana ; John E. Bonevich ; Sean N. Natoli ; Christina A. Hacker ; Tong Ren ; John S. Suehle ; Curt A. Richter ; Qiliang Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：December 16, 2015
• 年：2015
• 卷：7
• 期：49
• 页码：27306-27313
• 全文大小：582K
• ISSN：1944-8252

文摘

In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric interfaces, due to the pristine molecular self-assembly and the nanowire device self-alignment fabrication process. The memory cells exhibit discrete charged states at small gate voltages. Such multi-bit memory in one cell is favorable for high-density storage. These memory devices exhibit fast speed, low power, long memory retention, and exceptionally good endurance (>10⁹ cycles). The excellent characteristics are derived from the intrinsic charge-storage properties of the protected redox-active molecules. Such multi-bit molecular flash memory is very attractive for high-endurance and high-density on-chip memory applications in future portable electronics.