Electrochemical Doping in Electrolyte-Gated Polymer Transistors

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• 作者：Jonathan D. Yuen ; Anoop S. Dhoot ; Ebinazar B. Namdas ; Nelson E. Coates ; Martin Heeney ; Iain McCulloch ; Daniel Moses ; Alan J. Heeger
• 刊名：Journal of the American Chemical Society
• 出版年：2007
• 出版时间：November 21, 2007
• 年：2007
• 卷：129
• 期：46
• 页码：14367 - 14371
• 全文大小：201K
• 年卷期：v.129,no.46(November 21, 2007)
• ISSN：1520-5126

文摘

By comparing the changes in -* absorption with the transconductance in PEO-LiClO₄electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltagesresult from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, theconductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene),PBTTT-C14, is nonlinear with a crossover from d(T)/dT > 0 to d(T)/dT 0 as a function of the source-drain voltage. High current densities, up to 10⁶ A/cm² at 4.2 K, can be sustained in the electrochemicallydoped PBTTT-C14 films.