Preparation of Bismuth Telluride Films with High Thermoelectric Power Factor

详细信息    查看全文

• 作者：Jongbeom Na ; Younghoon Kim ; Teahoon Park ; Chihyun Park ; Eunkyoung Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：November 30, 2016
• 年：2016
• 卷：8
• 期：47
• 页码：32392-32400
• 全文大小：657K
• ISSN：1944-8252

文摘

Highly conductive n-type Bi₂Te₃ films on a flexible substrate were prepared via electrodeposition followed by a transfer process using an adhesive substrate. The growth of the Bi₂Te₃ crystals was precisely controlled by an electrochemical deposition potential (V_dep), which was critical to the preferred orientation of the crystal growth along the (110) direction and thus to the properties of a flexible thermoelectric generator (FTEG). A Bi₂Te₃ film prepared under V_dep of 0.02 V showed high electrical conductivity (691 S cm^–1) with a maximum power factor of 1473 μW m^–1 K^–2, which is the highest among the Bi₂Te₃ films prepared by the electrodeposition methods. As-prepared FTEG was bendable, showing only a small resistance change after 300 repeated bending cycles. Combined with the n-type Bi₂Te₃ FTEG, a prototype p-n-type flexible thermoelectric (pn-FTEG) was prepared using p-type poly(3,4-ethylene dioxythiophene)s. The pn-FTEG (5-couples) generated an output voltage of 5 mV at ΔT = 12 K with high output power of 56 nW (or 105 nWg^–1). These results indicate that the FTEG can reproducibly work well in a bent state and has high application potential for harvesting thermal energy from curved sources such as human body temperature.