Metastable Ge1鈥?i>xCx Alloy Nanowires

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• 作者：Byung-Sung Kim ; Jae-Hyun Lee ; Kiseok Son ; Sung Woo Hwang ; Byoung Lyong Choi ; Eun Kyung Lee ; Jong Min Kim ; Dongmok Whang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2012
• 出版时间：February 22, 2012
• 年：2012
• 卷：4
• 期：2
• 页码：805-810
• 全文大小：409K
• 年卷期：v.4,no.2(February 22, 2012)
• ISSN：1944-8252

文摘

Carbon-containing alloy materials such as Ge_1鈥?i>xC_x are attractive candidates for replacing silicon (Si) in the semiconductor industry. The addition of carbon to diamond lattice not only allows control over the lattice dimensions, but also enhances the electrical properties by enabling variations in strain and compositions. However, extremely low carbon solubility in bulk germanium (Ge) and thermodynamically unfavorable Ge鈥揅 bond have hampered the production of crystalline Ge_1鈥?i>xC_x alloy materials in an equilibrium growth system. Here we successfully synthesized high-quality Ge_1鈥?i>xC_x alloy nanowires (NWs) by a nonequilibrium vapor鈥搇iquid鈥搒olid (VLS) method. The carbon incorporation was controlled by NW growth conditions and the position of carbon atoms in the Ge matrix (at substitutional or interstitial sites) was determined by the carbon concentration. Furthermore, the shrinking of lattice spacing caused by substitutional carbon offered the promising possibility of band gap engineering for photovoltaic and optoelectronic applications.

Keywords:

germanium鈭抍arbon alloy; nanowire; chemical vapor deposition