Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics

详细信息    查看全文

• 作者：Wangying Xu ; Hongtao Cao ; Lingyan Liang ; Jian-Bin Xu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：July 15, 2015
• 年：2015
• 卷：7
• 期：27
• 页码：14720-14725
• 全文大小：397K
• ISSN：1944-8252

文摘

We reported a novel aqueous route to fabricate Ga₂O₃ dielectric at low temperature. The formation and properties of Ga₂O₃ were investigated by a wide range of characterization techniques, revealing that Ga₂O₃ films could effectively block leakage current even after annealing in air at 200 掳C. Furthermore, all aqueous solution-processed In₂O₃/Ga₂O₃ TFTs fabricated at 200 and 250 掳C showed mobilities of 1.0 and 4.1 cm² V^鈥? s^鈥?, on/off current ratio of 鈭?0⁵, low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.