InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires
详细信息 查看全文
- 作者：David Scarpellini ; Claudio Somaschini ; Alexey Fedorov ; Sergio Bietti ; Cesare Frigeri ; Vincenzo Grillo ; Luca Esposito ; Marco Salvalaglio ; Anna Marzegalli ; Francesco Montalenti ; Emiliano Bonera ; Pier Gianni Medaglia ; Stefano Sanguinetti
- 刊名：Nano Letters
- 出版年：2015
- 出版时间：June 10, 2015
- 年：2015
- 卷：15
- 期：6
- 页码：3677-3683
- 全文大小：395K
- ISSN：1530-6992
文摘
We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (鈮?.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nanowire lateral free surfaces.