Enhancement of the Luminescence Intensity of InAs/GaAs Quantum Dots Induced by an External Electric Field
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- 作者：Evgenii S. Moskalenko ; Mats Larsson ; K. Fredrik Karlsson ; Per Olof Holtz ; Bo Monemar ; Winston V. Schoenfeld ; Pierre M. Petroff
- 刊名：Nano Letters
- 出版年：2007
- 出版时间：January 2007
- 年：2007
- 卷：7
- 期：1
- 页码：188 - 193
- 全文大小：174K
- 年卷期：v.7,no.1(January 2007)
- ISSN：1530-6992
文摘
InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements.It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strengthof the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects areexplained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field.