Ultrathin Oxide Films by Atomic Layer Deposition on Graphene
详细信息 查看全文
- 作者：Luda Wang ; Jonathan J. Travis ; Andrew S. Cavanagh ; Xinghui Liu ; Steven P. Koenig ; Pinshane Y. Huang ; Steven M. George ; J. Scott Bunch
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：July 11, 2012
- 年：2012
- 卷：12
- 期：7
- 页码：3706-3710
- 全文大小：293K
- 年卷期：v.12,no.7(July 11, 2012)
- ISSN：1530-6992
文摘
In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young鈥檚 modulus of 154 卤 13 GPa. This Young鈥檚 modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes, and flexible electronics.