Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors

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• 作者：You Seung Rim ; Huajun Chen ; Tze-Bin Song ; Sang-Hoon Bae ; Yang Yang
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：August 25, 2015
• 年：2015
• 卷：27
• 期：16
• 页码：5808-5812
• 全文大小：339K
• ISSN：1520-5002

文摘

We investigated aqueous metal complex-based oxide semiconductor films formed with various ligands, such as chloride, acetate, fluoride, and nitrate. Nitrate ligand-based indium(III) precursor was easily decomposed at low temperature due to the replacement of all nitrate ions with water during solvation to form the hexaaqua indium(III) cation ([In(H₂O)₆]³⁺). Hexaaqua indium(III) cation was a key complex to realize high-quality oxide films at low temperature. Additionally, Al₂O₃-based high-k dielectric was also employed by using a nitrate precursor, and the hexaaqua aluminum(III) cation ([Al(H₂O)₆]³⁺) was confirmed. This complex-based Al₂O₃ film showed high breakdown voltage and stable capacitance under high frequency operation compared to organic solvent-based Al₂O₃ films. We successfully demonstrated aqueous-based In₂O₃ TFTs with Al₂O₃ high-k gate dielectrics formed at 250 掳C with a wide gate voltage operation and high saturation mobility and on/off ratio of 36.31 卤 2.29 cm² V^鈥? s^鈥? and over 10⁷, respectively.