Nonvolatile Resistive Switching Memory Properties of Thermally Annealed Titania Precursor/Polyelectrolyte Multilayers

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• 作者：Chanwoo Lee ; Inpyo Kim ; Hyunjung Shin ; Sanghyo Kim ; Jinhan Cho
• 刊名：Langmuir
• 出版年：2009
• 出版时间：October 6, 2009
• 年：2009
• 卷：25
• 期：19
• 页码：11276-11281
• 全文大小：948K
• 年卷期：v.25,no.19(October 6, 2009)
• ISSN：1520-5827

文摘

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. The multilayers were then converted to TiO₂ nanocomposite (TiO₂ NC) films after thermal annealing. A top electrode was coated on the TiO₂ NC films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 V_RESET and 1.3 V_SET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing.