Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer
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- 作者：Juyun Choi ; Seongheum Choi ; Yu-Seon Kang ; Sekwon Na ; Hoo-Jeong Lee ; Mann-Ho Cho ; Hyoungsub Kim
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2014
- 出版时间：August 27, 2014
- 年：2014
- 卷：6
- 期：16
- 页码：14712-14717
- 全文大小：426K
- ISSN：1944-8252
文摘
An ultrathin Ni interlayer (鈭? nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er鈥揝i鈥揘i mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal鈥搊xide鈥搒emiconductor field-effect transistors.