Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer

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• 作者：Seung Ki Baek ; Sung Soo Kwak ; Joo Sung Kim ; Sang Woo Kim ; Hyung Koun Cho
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 31, 2016
• 年：2016
• 卷：8
• 期：34
• 页码：22135-22141
• 全文大小：432K
• 年卷期：0
• ISSN：1944-8252

文摘

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu₂O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu₂O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu₂O/indium tin oxide with a Cu₂O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm².