A Resistance-Switchable and Ferroelectric Metal鈥揙rganic Framework
详细信息    查看全文
文摘
The ever-emerging demands on miniaturization of electronic devices have pushed the development of innovative materials with desired properties. One major endeavor is the development of organic- or organic鈥搃norganic hybrid-based electronics as alternatives or supplements to silicon-based devices. Herein we report the first observation of the coexistence of resistance switching and ferroelectricity in a metal鈥搊rganic framework (MOF) material, [InC16H11N2O8]路1.5H2O, denoted as RSMOF-1. The electrical resistance of RSMOF-1 can be turned on and off repeatedly with a current ratio of 30. A first-principles molecular dynamics simulation suggests that the resistive switching effect is related to the ferroelectric transition of N路路路H鈥揙路路路H鈥揘 bridge-structured dipoles of the guest water molecules and the amino-tethered MOF nanochannel. The discovery of the resistive switching effect and ferroelectricity in MOFs offers great potential for the physical implementation of novel electronics for next-generation digital processing and communication.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700