Direct Growth of Al Nanowire Arrays: Thermal Expansion and Field Emission Properties
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- 作者：Liang Li ; Xijin Xu ; Hanguan Chew ; Xiaohu Huang ; Xincun Dou ; Shusheng Pan ; Guanghai Li ; Lide Zhang
- 刊名：Journal of Physical Chemistry C
- 出版年：2008
- 出版时间：April 10, 2008
- 年：2008
- 卷：112
- 期：14
- 页码：5328 - 5332
- 全文大小：354K
- 年卷期：v.112,no.14(April 10, 2008)
- ISSN：1932-7455
文摘
The Al nanowire arrays were directly deposited on the Si substrates by a facile electron-beam evaporationtechnique, oblique angle deposition. This process was accomplished by tilting the Si substrates and adjustingthe incident angle of evaporated Al vapor flux from the normal of the substrates at 87
. X-ray diffraction,scanning electron microscopy, and transmission electron microscopy observations indicate that large-areaand single-crystalline Al nanowire arrays are effectively fabricated. In situ high-temperature X-ray diffractionmeasurements show that Al nanowires have a smaller lattice constant and smaller thermal expansion coefficientcompared with the Al film. The thermal expansion mechanism was discussed in detail. Our field emissionresults show that the Al nanowires might be potential field emitters in the future nanodevices.
. X-ray diffraction,scanning electron microscopy, and transmission electron microscopy observations indicate that large-areaand single-crystalline Al nanowire arrays are effectively fabricated. In situ high-temperature X-ray diffractionmeasurements show that Al nanowires have a smaller lattice constant and smaller thermal expansion coefficientcompared with the Al film. The thermal expansion mechanism was discussed in detail. Our field emissionresults show that the Al nanowires might be potential field emitters in the future nanodevices.