Exclusively Gas-Phase Passivation of Native Oxide-Free Silicon(100) and Silicon(111) Surfaces

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• 作者：Ye Tao ; Roland Hauert ; Christian L. Degen
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：May 25, 2016
• 年：2016
• 卷：8
• 期：20
• 页码：13157-13165
• 全文大小：589K
• 年卷期：0
• ISSN：1944-8252

文摘

Reactions in the gas phase are of primary technological importance for applications in nano- and microfabrication technology and in the semiconductor industry. We present exclusively gas-phase protocols to chemically passivate oxide-free Si(111) and Si(100) surfaces with short-chain alkynes. The resulting surfaces showed equal or better oxidation resistance than most existing liquid-phase-derived surfaces and rivaled the outstanding stability of a full-coverage Si(111)–propenyl surface.1,2 The most stable surface (Si(111)–ethenyl) grew one-fifth of a monolayer of oxide (0.04 nm) after 1 month of air exposure. We monitored the regrowth of oxides on passivated Si(111) and Si(100) surfaces by X-ray photoelectron spectroscopy (XPS) and observed a significant crystal-orientation dependence of initial rates when total oxide thickness was below approximately one monolayer (0.2 nm). This difference was correlated with the desorption kinetics of residual surface Si–F bonds formed during HF treatment. We discuss applications of the technology and suggest future directions for process optimization.