mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle">-K
2Bi
8Se
13(
I), K
2Sb
8Se
13(
II),K
2.5Bi
8.5Se
14(
III), andK
2.5Sb
8.5Se
14(
IV) were synthesizedby a molten flux method. The black needles of compound
I were formed at 600
mages/entities/deg.gif">C andcrystallized in the monoclinic
P2
1/
mspace group (No. 11) with
a = 17.492(3) Å,
b = 4.205(1)Å,
c = 18.461(4) Å,
mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> = 90.49(2)
mages/entities/deg.gif">.The final
R/
Rw = 6.7/5.7%.Compound
II is isostructuralto
I. Both
I and
II areisostructural with K
2Bi
8S
13which is composed of NaCl-, Bi
2Te
3-,andCdI
2-type units connecting to form K
+-filledchannels. The thin black needles of
III and
IVobtained at 530
mages/entities/deg.gif">C crystallize in the same space group
P2
1/
m with
a =17.534(4) Å,
b =4.206(1) Å,
c = 21.387(5) Å,
mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> =109.65(2)
mages/entities/deg.gif"> and
a = 17.265(3) Å,
b= 4.0801(9) Å,
c = 21.280(3)Å,
mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> = 109.31(1)
mages/entities/deg.gif">, respectively. The final
R/
Rw = 6.3/8.3% and 5.1/3.6%.Compounds
IIIand
IV are isostructural and potassium and bismuth/antimonyatoms are disordered overtwo crystallographic sites. The structure type is very closelyrelated to that of
I. Electricalconductivity and thermopower measurements show semiconductor behaviorwith ~250 S/c
mand ~-200
mages/entities/mgr.gif">V/K for a single crystal of
I and ~150S/cm and ~-100
mages/entities/mgr.gif">V/K for a polycrystallineingot of
III at room temperature. The effect of vaccu
mannealing on these compounds isexplored. The optical bandgaps of all compounds were determined tobe 0.59, 0.78, 0.56,and 0.82 eV, respectively. The ther
mal conductivities ofmelt-grown polycrystalline ingotsof
I and
III are reported.