High Thermopower and Low Thermal Conductivity in Semiconducting Ternary K-Bi-Se Compounds. Synthesis and Properties of mages/gifchars/beta2.gif" border="0" align="middle
详细信息    查看全文
文摘
mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle">-K2Bi8Se13(I), K2Sb8Se13(II),K2.5Bi8.5Se14(III), andK2.5Sb8.5Se14(IV) were synthesizedby a molten flux method. The black needles of compoundI were formed at 600 mages/entities/deg.gif">C andcrystallized in the monoclinic P21/mspace group (No. 11) with a = 17.492(3) Å,b = 4.205(1)Å, c = 18.461(4) Å, mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> = 90.49(2)mages/entities/deg.gif">.The final R/Rw = 6.7/5.7%.Compound II is isostructuralto I. Both I and II areisostructural with K2Bi8S13which is composed of NaCl-, Bi2Te3-,andCdI2-type units connecting to form K+-filledchannels. The thin black needles of III andIVobtained at 530 mages/entities/deg.gif">C crystallize in the same space groupP21/m with a =17.534(4) Å, b =4.206(1) Å, c = 21.387(5) Å, mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> =109.65(2)mages/entities/deg.gif"> and a = 17.265(3) Å, b= 4.0801(9) Å, c = 21.280(3)Å, mages/gifchars/beta2.gif" BORDER=0 ALIGN="middle"> = 109.31(1)mages/entities/deg.gif">, respectively. The finalR/Rw = 6.3/8.3% and 5.1/3.6%.Compounds IIIand IV are isostructural and potassium and bismuth/antimonyatoms are disordered overtwo crystallographic sites. The structure type is very closelyrelated to that of I. Electricalconductivity and thermopower measurements show semiconductor behaviorwith ~250 S/cmand ~-200 mages/entities/mgr.gif">V/K for a single crystal of I and ~150S/cm and ~-100 mages/entities/mgr.gif">V/K for a polycrystallineingot of III at room temperature. The effect of vaccumannealing on these compounds isexplored. The optical bandgaps of all compounds were determined tobe 0.59, 0.78, 0.56,and 0.82 eV, respectively. The thermal conductivities ofmelt-grown polycrystalline ingotsof I and III are reported.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700